I-V model of nano nMOSFETs incorporating drift and diffusion current

It is believed that drift current dominates the whole current behavior in long channel device as V GS > V T . However, when the device is kept scaling down until nano-node generation, some issues like velocity saturation and velocity overshoot occur constantly. These two issues give us a significant challenge to estimate the drain current. In the nano range of device size, we find that the I-V model in simulation and measurement shows the more impressive performance if the diffusion behavior of channel carriers is added into the current-voltage (I-V) model in saturation mode. The speculation is probed in this work.