Electron effective mass and band‐gap dependence on alloy composition of AlyGaxIn1−y−xAs, lattice matched to InP

AlyGaxIn1−y−xAs structures were prepared by molecular beam epitaxy to determine both the electron effective mass and band‐gap dependence of the InP lattice‐matched alloy. Cyclotron resonance and photoluminescence measurements were used, respectively. The effective mass obtained after nonparabolicity correction is m*=0.0403+0.0817y. The band‐gap relationships obtained at 300 and 5.5 K are Eg (eV)=0.752+1.453y, and Eg (eV)=0.792+1.530y, respectively.