Investigation of the resolution of metal-nitride-oxide-semiconductor structures in recording and reading of optical information
1975
An investigation was made of the spatial resolution achieved in optical recording of information using a metal-nitride-oxide-semiconductor (MNOS) structure with a continuous electrode. A resolution of at least 10 μ in photoelectric reading was achieved only when an additional dielectric-film grid was deposited below the continuous electrode. Six bits of information were recorded experimentally as separate points.
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