Light scattering in highdislocationdensity GaN

Z. L. Liau, R. L. Aggarwal, P. A. Maki, R. J. Molnar, J. N. Walpole, R. C. Williamson, and I. Melngailis Citation: Applied Physics Letters 69, 1665 (1996); doi: 10.1063/1.117021 View online: http://dx.doi.org/10.1063/1.117021 View Table of Contents: http://scitation.aip.org/content/aip/journal/apl/69/12?ver=pdfcov Published by the AIP Publishing Articles you may be interested in Selfassembling GaN quantum dots on Al x Ga1−x N surfaces using a surfactant Appl. Phys. Lett. 69, 4096 (1996); 10.1063/1.117830 Study of nonlinear optical effects in GaN:Mg epitaxial film Appl. Phys. Lett. 69, 2953 (1996); 10.1063/1.117741 Direct imaging of impurityinduced Raman scattering in GaN Appl. Phys. Lett. 69, 2650 (1996); 10.1063/1.117547 Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques Appl. Phys. Lett. 69, 770 (1996); 10.1063/1.117886 Gain analysis for surface emission by optical pumping of wurtzite GaN Appl. Phys. Lett. 69, 94 (1996); 10.1063/1.118131