Impurity Incorporation during Beam Assisted Processing Analyzed using Nuclear Microprobe

Abstract Impurity incorporation due to localized beam processing by focused ion beams (FIBs) and electron beams (EBs) such as physical sputtering, gas-assisted etching (GAE) using iodine gas and beam-assisted deposition using (CH 3 ) 3 CH 3 C 5 H 9 Pt precursor gas has been investigated by a medium energy nuclear microprobe. RBS mapping on incorporated impurities has been performed using 300 keV Be 2+ beams with a beam spot size of 80 nm. RBS mapping images for physically sputtered and GAE areas indicate the localized Ga and I atoms distributions from the Ga FIB and from the etchant gas, respectively. The amount of Ga in the GAE area was estimated to be ∼2.7 times smaller than that in the physically sputtered area. RBS mapping images for FIB assisted Pt deposited areas revealed that Pt and Ga atoms were distributed in the processed areas, while C atoms resided beyond the processed areas.