Method for cleaning metal organic chemical vapor deposition (MOCVD) device

A method for cleaning a metal organic chemical vapor deposition (MOCVD) device specifically comprises the steps of leading clean gas including at least argon (Ar) into a reaction cavity, and utilizing a plasma processing device to enable the clean gas to be a plasma; forming negative bias at the top of the reaction cavity to enable the plasma of the clean gas to be quickened and bombard the top of the reaction cavity, and accordingly removing residual sediment located at the top of the reaction cavity. Due to the fact that the method for cleaning the MOCVD device does not require the reaction cavity to be cooled, the waiting time between twice MOCVD processes is shortened, and the production efficiency and yield of the MOCVD device can be improved remarkably. In addition, due to the fact that the Ar plasma and metal do not produce chemical reaction, materials on the inner wall of the reaction cavity do not cause corrosion.