Metal oxide semiconductor (MOS) type high voltage integrated circuit and manufacturing method

The invention discloses a metal oxide semiconductor (MOS) type high voltage integrated circuit and a manufacturing method. The MOS type high voltage integrated circuit is used in the manufacturing field of the semiconductor integrated circuit. The circuit includes a high voltage P-channel Metal Oxide Semiconductor (PMOS) and a high voltage N-channel metal oxide semiconductor (NMOS) which are arranged on a substrate. A channel length of high voltage PMOS is equal to an overlying width of a polysilicon gate which is arranged on the self body and an N trap active area. A channel length of the high voltage NMOS is equal to the width of polysilicon gate which is arranged on the self body. the side wall of a first heavy doping drain region N+ is surrounded with a light doping drain region NLDD, a distance is set between the side wall of the first heavy doping drain region N+ and the edges of the side wall, and an edge interval of a field oxide.teh side wall of the second heavy doping drain region P+ is surrounded by a P field doping drain region, a distance is set between the side wall of the second heavy doping drain region P+ and the interval of the edges of the polysilicon gate. The MOS type high voltage integrated circuit and the manufacturing method weaken a superficial electric field of the high voltage MOS integrated circuit.