Structure and properties of TiO/sub 2/:Fe thin films prepared by the sol-gel technique

TiO/sub 2/ thin films doped with Fe have been prepared by using the sol-gel process on silicon substrates. A metal-organic precursor solution for coating silicon substrates was synthesized using a Ti alkoxide derivative iron salt and isopropanol as a solvent. Acetylacetone was used as an inhibitor of derivative iron hydrolysis-condensation reactions. The structure of the films was investigated by X-ray diffraction and Raman scattering analysis. The electrical characterization of the films is reported.