Resonant states in GaAs/Ga1-xAlxAs Multi-Quantum-Wells

The effect of buffer layers on resonant states in a Multi-Quantum-Well (MQW) sandwiched between two substrates is investigated here theoretically. These resonances appear as well-defined peaks in the density of states (DOS). The local and total densities of states are obtained from an analytical determination of the Green functions. Due to the substrate/buffer layer/ MQW /substrate interaction, different kinds of resonant states are found and their properties are investigated. We show in particular that an incident electron in the left-hand side substrate is transmitted in the right hand side substrate of the structure with large time delays in the phase time. The peaks in the phase time associated with the transmission coefficient are found to be similar to those corresponding to the DOS. The intensity of these peaks associated with extended states in MQW’s and Tamm like states lying at the MQW/buffer layer interface, strongly depends on the width of the buffer layer.