Reduced 1/f noise at 293 K in 0.55 m p-Si0.3Ge0.7 hetero-MOSFETs

For the first time, we have demonstrated reduced 1/f, low-frequency (LF), noise in sub-μm metamorphic high Ge content p-Si0.3Ge0.7 MOSFETs at 293K. Three times lower LF noise over 1-100 Hz range at VDS = 50 mV and VG Vth= 1.5 V was measured for a 0.55 μm effective gate length p-Si0.3Ge0.7 MOSFET compared with p-Si MOSFET. Performed quantitative analysis demonstrates the importance of carrier number fluctuations (CNF) and correlated mobility fluctuations (CMF) components of 1/ f noise for p-Si surface channel MOSFET, and absence of CMF for p-Si0.3Ge0.7 buried channel MOSFETs.