Characterization of the plasma plume and of thin film epitaxially produced during laser ablation of SnSe

Abstract Laser-induced ablation was applied to thin film deposition from a tin selenide target. Diagnostic methods are applied to the characterization of the laser ablated plume. Emission from atomic and ionic excited states of tin and selenium dominates the total emission of the plasma plume with excitation temperatures up to 12 000 K. A high-speed ICCD camera has also been used to study three-dimensional plume propagation. Positive and negative cluster ions of bare tin, selenium and of the combined elements have been detected by laser mass-spectrometry of the plume. The growth of SnSe has been analysed by electrical and optical techniques. The effect of laser fluence on the plume and on the properties of the deposits has also been studied. The epitaxial growth of SnSe on several substrates is reported.