In situ interface analysis by ion backscattering/channeling technique using a thin window cell

In situ analysis of solid–liquid and solid–gas interfaces by high energy ion backscattering/channeling technique have been investigated. Using thin single crystal windows like that of Si in a specially constructed cell, the backscattered yield and the channeling minimum yield have been utilized to obtain in situ information on solid–gas and solid–liquid interfaces. Examples in the application of this technique to investigate the in situ etching damage at the interface in the dry etching of Si have been given. It is found that XeF2 etching of Si crystal offers a good surface which is relatively free from any visible damage within the limitation of the sensitivity of the RBS analysis. The evidence of an epitaxially grown Cu layer on Si from CuSO4 solution in the thin window cell has been given. These experimental results demonstrate the potential application of this technique in the field of catalysis and electrochemistry.