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Redistribution of impurity in ion-doped layers during fast heat treatment of gate dielectric
Redistribution of impurity in ion-doped layers during fast heat treatment of gate dielectric
2019
Victor M. Anishchik
Valiantsina A. Harushka
Uladzimir A. Pilipenka
Vladimir V. Ponariadov
Vitali A. Saladukha
Jsc «Integral»
Keywords:
Impurity
Gate dielectric
Doping
Condensed matter physics
Ion
Materials science
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