Effect of Annealing Conditions on Photoluminescence Properties of Low-Pressure Chemical Vapour Deposition-Grown Silicon Nanocrystals

The photoluminescence properties of silicon nanocrystals in SiO2, prepared by low-pressure chemical vapour deposition and subsequent annealing have been studied. A comprehensive range of combinations of film compositions and annealing conditions were tested. The use of two-step annealing (a rapid annealing, followed by a conventional one) used instead of the common one-step conventional annealing, enhances emission. Annealing conditions are key to the photoluminescence and structural properties of the obtained film and have been investigated in detail. Film composition is also an important parameter, which allows tuning of the emission in a wide spectral range in the near infrared.