Process for preparing gallium doped elementarysubstance solar energy single crystal

The invention relates to a method for producing a solar cell silicon monocrystal, in particular to a method for producing a solar cell silicon monocrystal doped with gallium element. The production method comprises the doping method and the crystal pulling technique, wherein, the doping method comprises the following steps: firstly, a doping device is wiped; secondly, the doping device is cooled; thirdly, the gallium element is placed into the doping device; fourthly, the gallium element is isolated and replaced; and fifthly, the gallium element is doped into molten materials. The crystal pulling technique comprises the following steps of: firstly, seeding; secondly, shoulder-extending; thirdly, shoulder rotation; fourthly, equal-diameter growth; fifthly, tail growth; and sixthly, blowing-out. As verified by the test result through further test of a solar cell which adopts the monocrystal doped with the gallium element, compared with a solar cell which adopts a monocrystal doped with boron element, the characteristic indexes of the solar cell which adopts the monocrystal doped with the gallium element are greatly improved, thereby the demand of a high-end solar cell can be met.