Outcome of refinement of the thermal sensitivity Ga0.65In0.35As0.15Sb0.85 / GaSb MQW laser

We discuss an optimization procedure for type-II mid-IR lasers. The QW layer composition was used as the variable parameter. The proposed design combines the suppression of the Auger recombination processes and the improvement of the electron and hole confinement, the characteristic temperature T0 of the strained Ga1–xInxAsySb1–y/GaSb MQW laser during laser operation in the 250–350 K temperature range. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)