Investigation of a program-controlled process of impregnation of porous semiconductors with silver nanoparticles to create an electrical contact

The original idea is to deposit metal layers from concentrated solutions of colloidal inks of metal nanoparticles (silver) in a programmable pattern using methods of modified 3D extrusion with syringe dispenser, followed by thermal and electrodiffusion bonding of the nanostructured metal layer in the presence of a strong electric field. Porous semiconductor structures based on monocrystalline silicon of n- and p-type electrical conductivity with different resistivity were obtained by the method of electrochemical etching of the initial plate in electrolytes based on hydrofluoric acid. For the analysis of the hydrophobicity — hydrophilicity condition and, accordingly, the wettability of porous semiconductor structure, a specially developed apparatus was used, based on measuring the contact angle of wetting by the spreading drop method. To study the morphology of the surface of the obtained samples, the methods of scanning electron (Mira TESCAN II) and scanning-probe (Integra Terma) microscopy were used.