In the single wafer etching apparatus nitride

The present invention discloses a single wafer etching apparatus and method of the various embodiments of the apparatus in a single wafer. In an example, the single wafer etching apparatus etching the silicon nitride layer comprising: phosphoric acid is heated to a first temperature; Sulfuric acid is heated to a second temperature; and the mixture heated through the heated sulfuric acid; a phosphoric acid / sulfuric acid the mixture was heated to a third temperature; and using a heated phosphoric acid / sulfuric acid mixture etching the silicon nitride layer. The present invention also provides a silicon single wafer etching apparatus.