AC-driven perovskite light-emitting field-effect transistors

In recent years, hybrid organic-inorganic perovskites has drawn great attention towards applications in light-emitting devices such as light-emitting diodes [1], X-ray scintillators [2] and lasers [3]. Recently we have demonstrated a perovskite light-emitting field-effect transistors (PeLEFETs) [4] operating at low temperatures, with gate-controlled carrier injection and recombination zone. Despite the balanced carrier injection provided by the FET configuration, the performance of these devices is strongly affected by ionic transport effects which cause large hysteresis and hinder operation at room temperature.