Phase modulated ellipsometry from the ultraviolet to the infrared: In situ application to the growth of semiconductors

The various spectroellipsometric techniques, based on phase modulation (PME), are presented. A wide range of in situ applications of PME techniques to semiconductor growth and interfaces have been reviewed. Amorphous, microcrystalline and crystalline materials, prepared in the reactive atmospheres of PECVD and MOCVD have been investigated. In the UV-visible range the sensivity of the real time measurements to the various phases of the semiconductor growth has been emphasized. In particular, the various phases of the growth of a thin film: nucleation, coalescence, formation and evolution of surface roughness are characterised with a few monolayers sensitivity