Low-voltage complementary inverters based on ion gel-gated ReS2 and BP transistors

Abstract We demonstrated the preparation of low-voltage complementary inverters based on transistors made of ion gel-gated 2D materials. Mechanically-exfoliated ReS 2 was utilized as an n -type semiconductor. The ultrahigh capacitance (6 μF/cm 2 ) and long-range polarizability of the ion gel gate dielectric layer provided low-voltage operation below 2 V and allowed a coplanar-gate configuration of the transistors. The ion gel-gated ReS 2 transistors exhibited excellent device performance including an electron mobility of 6.7 cm 2 /Vs and an on-off current ratio of ∼10 4 . Both the charge-transport mechanism and the contact properties of the device were investigated systematically by measuring the temperature-dependent electrical properties. Mechanically-exfoliated black phosphorous (BP) or WSe 2 was employed as the p -type counterpart semiconductors to fabricate the complementary inverter. The resulting 2D complementary inverter exhibited low-voltage operation below 2 V with clear signal inversion. The proposed low-voltage ion gel-gated complementary inverter based on 2D materials opens up new opportunities for realizing future electronics based on 2D materials.