The photoelectric transducer

A photoelectric transducer is thereby provided with improved conversion efficiency, that the combination of a top cell (4) and a lower cell materials (2) used is optimized. The photoelectric transducer according to the invention is provided with a first and a second pn-junction. Here, the first pn junction is formed substantially in a represented by (Al¶1-y¶Ga¶y¶) ¶1-x¶In¶x¶P semiconductor (4) and the second pn junction is essentially formed in one represented by Ga¶1-z¶In¶z¶As semiconductor (2).