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Acemap > Paper > ゲルマニウムの金属-酸化物-半導体デバイス用のLu 2 O 3 /Al 2 O 3 ゲート絶縁体

ゲルマニウムの金属-酸化物-半導体デバイス用のLu 2 O 3 /Al 2 O 3 ゲート絶縁体

2008 
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