A method of making flash memory

The present invention discloses a method of making a flash memory, comprising, providing a semiconductor substrate, the semiconductor substrate having a flash memory cell region and the logic circuit region; depositing a gate material layer on said semiconductor substrate; etching the flash memory unit area of ​​the gate material layer to form a control gate; a first photoresist layer and the BARC layer formed on the semiconductor substrate; removing the logic circuit is located in the region of the first lithography subbing layer, to retain the flash memory cell region of the first photoresist layer; forming a second photoresist layer is exposed on the bottom antireflective layer and the first photoresist layer. The control gate of the method according to the present invention proposed double photoresist layer covers, in order to solve the problem of damage to the control gate of the flash memory cell region is formed in the process of etching the gate logic loop in order to improve flash the overall performance and yield of flash memory.