SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

Abstract The formation of buried SiO 2 layers by high dose oxygen implantation has been monitored by the implantation of 18 O tracer atoms and subsequent analysis by negative ion SIMS. Exchange of 18 O with matrix oxygen in the buried layer occurred for all experiments. Rapid redistribution of the implanted tracer trace to the edges of the SiO 2 layer was observed. The lower SiSiO 2 interface appears to be a barrier to further redistribution of the tracer oxygen.