Electrical characterization of thin gate oxynitride obtained by N+ implantation into polysilicon/thermal oxide/silicon structure

This work describes the formation and characterization of thin silicon oxynitride (SiO X N Y ) films obtained by ion implantation of atomic nitrogen (N + ) in polysilicon (350 nm)/ thermal oxide (3.9 or 6.2 nm)/silicon structures with peak implantation inside the polysilicon next to polysilicon / thermal oxide interface. The electrical characterization was performed by measurements of Capacitance X Voltage - CV (thickness, effective charge density ( 10 MV/cm). In addition, oxynitride physical thickness (X TEM ) and oxynitride permissivity (e real ) were obtained with the aid of transmission electron microscopy (TEM).