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Effect of technological annealing temperature on radiation-induced changes in the electrical properties of MOS(Si) structures
Effect of technological annealing temperature on radiation-induced changes in the electrical properties of MOS(Si) structures
1996
P. V. Kuchinskii
G. A. Lisovskii
E. D. Savenok
Keywords:
Optoelectronics
Annealing (metallurgy)
radiation induced
Materials science
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