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Simulation of Tunneling Current due to Enhanced Electric Fields at the Edge of Gate Electrode
Simulation of Tunneling Current due to Enhanced Electric Fields at the Edge of Gate Electrode
1993
Hirotaka Muto
Hiroyoshi Kitabayashi
Koichiro Nakanishi Setsuo Wake
Moriyoshi Nakajima
Keywords:
Nuclear magnetic resonance
Nanotechnology
Electrode
Quantum tunnelling
Electric field
Materials science
tunneling current
Optoelectronics
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