Solid-source molecular-beam epitaxy growth of GaInNAsSb/InGaAs single quantum well on InP with photoluminescence peak wavelength at 2.04 μm

Single quantum wells In0.53Ga0.47As/Ga0.47In0.53N0.021As0.949Sb0.03/In0.53Ga0.47As with room-temperature photoluminescence peak wavelength at 2.04 μm were grown on InP substrate by solid-source molecular-beam epitaxy (MBE). In situ reflection high-energy electron diffraction was used to monitor the MBE growth. Double-crystal high-resolution x-ray diffraction and secondary ion mass spectrometry were utilized to characterize the samples and optimize the growth conditions. The roles of nitrogen and antimony atoms in the growth of quinary material, GaInNAsSb, were investigated.