Old Web
English
Sign In
Acemap
>
Paper
>
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories
2019
Yung-Yueh Chiu
Cheng-Han Lin
Jhih-Siang Yang
Bo-Jun Yang
Minoru Aoki
Toshiaki Takeshita
Masaru Yano
Riichiro Shirota
Keywords:
NAND gate
Hydrogen
Threshold voltage
Optics
Optoelectronics
Physics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
14
References
0
Citations
NaN
KQI
[]