Experimental demonstration of low jitter performance and high reliable 1060nm VCSEL arrays for 10Gbpsx12ch optical interconnection

No systematic studies on 1060nm high speed VCSELs have been reported in terms with reliability so far to our best knowledge. In this work, a systematic and intensive study on reliability has been performed for our 1060nm VCSELs consist of double intra-cavity and oxide confined structure with >70ps eye opening margin in Ib=3mA. Estimated power dissipation per bit rate of >5Gbps/mW at Ib=2mA was obtained from low series resistance and low drive voltage characteristics due to effective current injection in our double intra-cavity structure. Aging tests for 3,467pcs discrete non-hermetic VCSELs were performed under 6mA, 70°C to 120°C and up to 5,736 hours, which is equivalent to over 10million device hours in normal operating condition of 40°C and Ib=5mA. We found one degraded device due to the disconnection of the metal interconnecting layer, resulting in 81Fits (C.L.=90%) under Ea=0.35eV and no current accelerated factor. Also, their degradation of threshold current after 1,000 hours operation was less than 0.1mA under high stress condition of >40kA/cm 2 and 120°C, which corresponds to more than hundreds year operation. No eye diagram degradation was observed as far as no large threshold current increase under the high stress condition up to 40kA/cm 2 . It is experimentally proven that inherent potentiality of the VCSELs with 1060nm InGaAs-QW and double intra-cavity structure would be applicable to the future large green data traffic system.