Temperature dependence of the subthreshold characteristics of dynamic threshold metal-oxide-semiconductor field-effect transistors and its application to an absolute-temperature sensing scheme for low-voltage operation

In this report the author proposes an absolute-temperature sensing scheme based on the temperature dependence of the subthreshold current–voltage characteristics of dynamic threshold metal–oxide–semiconductor (DTMOS) field-effect transistor devices. The proposed sensing scheme requires neither a voltage higher than 0.5 V nor initial precise calibration. It is suitable for silicon-on-insulator (SOI) circuits based on the SOI technology using an SOI substrate, but it can also be easily applied to bulk MOS devices.