Temperature-induced physical failure mechanisms in thick resistive films

Abstract Temperature-dependent failure mechanisms in thick resistive films exposed at various elevated temperatures from 423 to 1223 K have been investigated. The electrical parameters together with the microscopic examination reveal marginal variations in resistance due to accelerated ageing at low-temperature stress range; drastic increase in resistance due to conductive particle agglomeration at intermediate stress region; and sharp decrease in resistance due to formation of conductive reactive layers at higher stress levels.