Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

A. J. Zilkie,J. Meier,P. E. Smith,Mohammad Mojahedi,J. S. Aitchison,Philip J. Poole,Claudine Nì. Allen,P.J. Barrios,Daniel Poitras,R. Wang,T. J. Rotter,C. Yang,A. Stintz,Kevin J. Malloy

Comparison of the gain recovery times in low dimensional semiconductor amplifiers at 1.55 μm

2006

A. J. Zilkie
J. Meier
P. E. Smith
Mohammad Mojahedi
J. S. Aitchison
Philip J. Poole
Claudine Nì. Allen
P.J. Barrios
Daniel Poitras
R. Wang
T. J. Rotter
C. Yang
A. Stintz
Kevin J. Malloy

We compare experimentally the gain recovery times of quantum dot, quantum dash, and quantum well amplifiers based on InP and operating at 1.55 μm. The QD device gives the shortest recovery time of ~15 ps.

Keywords:

Optoelectronics
Amplifier
Quantum well
Quantum dot
Semiconductor
Quantum
Quantum mechanics
Physics
laser beams
semiconductor quantum wells
semiconductor quantum dots
Optics

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