Effect of hydrogen on the electrical properties of p-type Pb0.8Sn0.2Te thin films

Abstract D.C. conductivity and Hall Coefficient studies were made in the temperature range 77–300 K. on p -type Pb 0.8 Sn 0.2 Te thin films exposed to molecular hydrogen gas at high pressures (150–500 PSI) for 2 h. The Hall Coefficient is found to increase with the increase in hydrogen pressure and reaches a maximum at about 250 PSI. With further increase in the gas pressure, the Hall Coefficient is found to decrease and to change its sign. Mobility however increases with the increase in the gas pressure. Hydrogen is found to stabilize the electrical properties of these films.