Uniform and High-Power Characteristics of AlGaInP-based Laser Diodes by 4-inch Wafer Process Technology for DVD-R/RW/RAM

In this study, we demonstrate the high-power (over 400 mW) at 75 degC single-lateral-mode operation of a 650-nm band LD, and we present the excellent uniformity of LD characteristics in 4-inch wafer. In summary, we have successfully fabricated high-power and single-lateral-mode 650-nm band AlGaInP LDs by using the 4-inch wafer process technology for the first time. The results confer the promising way to realize the high-speed (over 8times) dual layer recordable DVD systems