Semiconductor device using grapheme-graphite film and method of fabricating the same

A grapheme-graphite film (4) is made of inexpensive and easily available diamond fine particles.  The diamond fine particles are coated, as a colloid solution, on a substrate (1) made of an appropriate material.  The coating requires no special expensive facility and is performed in an atmosphere at a room temperature.  The diamond fine particle film (2) formed by coating is transformed to the grapheme-graphite film (4) by using a phase change from diamond to graphite, which is generated by a heat source (3) capable of locally focusing energy.  The grapheme-graphite film (4) is formed with arbitrary shapes at arbitrary positions, so that a semiconductor device including wirings, electrodes, and channels made of the grapheme-graphite film (4) is fabricated.