Semiconductor device using grapheme-graphite film and method of fabricating the same
2009
A grapheme-graphite film (4) is made of inexpensive and easily available diamond fine particles. The diamond fine particles are coated, as a colloid solution, on a substrate (1) made of an appropriate material. The coating requires no special expensive facility and is performed in an atmosphere at a room temperature. The diamond fine particle film (2) formed by coating is transformed to the grapheme-graphite film (4) by using a phase change from diamond to graphite, which is generated by a heat source (3) capable of locally focusing energy. The grapheme-graphite film (4) is formed with arbitrary shapes at arbitrary positions, so that a semiconductor device including wirings, electrodes, and channels made of the grapheme-graphite film (4) is fabricated.
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