Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition
2012
The authors report the effect of growth temperature on the structural quality of an InAlN layer lattice matched to GaN. InAlN/GaN structures were grown on a sapphire substrate using a low-temperature-grown GaN buffer layer. The X-ray diffraction and Atomic force microscopy results indicate that the quality of the InAlN layer is strongly affected by the three-dimensionally grown surface morphology, depending on the growth temperature. The lattice matching of InAlN to GaN with a flat surface and a smooth interface are obtained at temperatures of 790–800 °C. The Schottky diode fabricated on InAlN grown at 800 °C shows high-quality characteristics with the leakage current as low as 2.3 ×10-9 A at -5 V, corresponding to a current density of 1.2 ×10-6 A/cm2 and 6.2 ×10-8 A at -10 V.
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