Formation and optical properties of InGaN/GaN nano-structures grown on amorphous Si substrates by MOCVD

Abstract Nano-scale InGaN/GaN multi-structures have been grown on amorphous Si substrates using metal-organic chemical vapor deposition (MOCVD). The density, lateral size and height of the grown nano-scale InGaN/GaN multi-structures were estimated to be 10 10  cm −2 , 120 nm and 50 nm, respectively, by atomic-force microscopy (AFM). The optical properties of these nano-structures have been studied by photoluminescence (PL) and Raman scattering. Compared to the band gap emission from a reference InGaN/GaN multi-quantum wells sample, an evident blue-shift of the emission peak from the InGaN/GaN nano-structures could be observed from PL spectra obtained at 20 K. This result suggests that the carriers in the InGaN/GaN nano-structures are three-dimensionally confined.