The Influence of RTA Heating Rate on the TiSi 2 and Si - TiSi 2 Interface Roughness

In TiSi 2 metallized devices, the second distribution of leakage current (I>lμA) is caused by the Si/TiSi 2 interface roughness. In this work, 40gm thick Ti films are sputtered onto Si waters. RTA was done in N 2 atmosphere. Heating rates of 0, 0.5, 1, 5, and 100°C S −-1 are examined. Samples are characterized by AFM, RBS, XRD and laser light scattering methods. The parameters related to roughness are heating rate sensitivity and oxygen contamination which decreases the roughness on the interface.