Electrical stability of a 65nm technology Ni-silicided junctions under accelerated bias stressing

The electrical stability of nickel-silicided junctions in a 65nm technology has been investigated under accelerated bias stress (ABS) testing. The nickel-silicided junctions show some shift during the ABS testing; however, the increase in leakage for the junctions tended to saturate at safe levels. The increase in leakage is consistent with a hydrogen release mechanism, during the ABS testing, resulting in the depassivation of electrically active sites along the junction perimeter.