Structural, Optical and Electrical Properties of Al / SnO2 / p‐Si MIS Diodes

The absorption‐wavelength, basis absorption spectrum and the Current‐Voltage (I‐V) characteristics of Al / SnO2 / p‐Si (MIS) Schottky Diodes prepared by means of spray Pyrolysis method have been measured at 300 K. To possess information about the optical properties of Al / SnO2 / p‐Si (MIS) Schottky diode optical absorptions, optical transmittance, band‐gap and Urbach Parameter were investigated. The diode structures were studied by X‐Ray diffraction. X‐Ray diffraction studies showed that the crystallite size and prefential growth directions of diode.