Quantitative analysis of boron in wafers and MG silicon using laser induced breakdown spectroscopy

Laser Induced Breakdown Spectroscopy, LIBS, is an analytical method which allows very fast measurement of the composition of any material by atomic emission spectroscopy, without sampling. LIBS is a promising tool for the analysis of metallurgical and photovoltaic grade silicon. The high sensitivity of the technique (10 -7 g/g) permits characterization of the purity of silicon which has been treated by various processes. Technical aspects of LIBS will be presented with regard to the optimization of the method for the analysis of silicon, notably for boron quantification. These include the use of sample chamber purge gas and the temporal gating of laser pulse and emissions measurement.