III-Nitride millimeter wave transistors

Abstract This chapter reviews current status of GaN-based millimeter-wave power amplifier performance and discusses recent advancements in high-frequency III-nitride high electron mobility transistor (HEMT) device technologies for improved frequency performance. It also describes novel GaN-based transistor designs to address traditional performance trade-off for rapidly increasing demand for efficient and linear power amplification in upcoming millimeter-wave communication systems.