An improved performance of copper phthalocyanine OFETs with channel and source/drain contact modifications

We report an effective method to improve the performance of p-type copper phthalocyanine(Cu Pc)based organic field-effect transistors(OFETs) by employing a thin para-quaterphenyl(p-4p) film and simultaneously applying V2O5 to the source/drain regions.The p-4p layer was inserted between the insulating layer and the active layer,and V2O5 layer was added between Cu Pc and Al in the source–drain(S/D) area.As a result,the fieldeffect saturation mobility and on/off current ratio of the optimized device were improved to 5102cm2/(V s)and 104,respectively.We believe that because p-4p could induce Cu Pc to form a highly oriented and continuous film,this resulted in the better injection and transport of the carriers.Moreover,by introducing the V2O5 electrode’s modified layers,the height of the carrier injection barrier could be effectively tuned and the contact resistance could be reduced.