Switching Variability Factors in Compliance-Free Metal Oxide RRAM.
2019
Switching variability in polycrystalline compliance-free HfO 2 -based 1R RRAM is evaluated employing ultra-fast low voltage pulse approach. Changes in filament conductivity are linked to the variations of energy consumed in a switching process. This study indicates that variability is reduced (suppressed) in more resistive filaments.
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