Integrated rate gyro and accelerometer sensor and method for manufacturing an integrated rotation rate and acceleration sensor

It is a micromechanical device with a sensor wafer, an intermediate wafer and an evaluation wafer proposed, wherein the micromechanical device having a main extension plane, wherein the sensor wafer between the wafer and the evaluation of wafers are disposed one above the other, that the intermediate wafer between the sensor wafer and the evaluation wafer is arranged, wherein the evaluation wafer having at least one application specific integrated circuit, and wherein the sensor wafer and / or the intermediate wafer a first sensor element and the sensor wafer and / or the intermediate wafer comprising a spatially separated from the first sensor element second sensor element, wherein the first sensor element is in a first cavity which is formed by the intermediate wafer and the sensor wafer and the second sensor element is in a second cavity formed by the intermediate wafer and the sensor wafer, wherein a first gas pressure in the first Cavity is different from a second gas pressure in the second cavity, and having the intermediate wafer at least at one point an opening in a direction perpendicular to the main extension plane.