Method for producing group III nitride crystal, group III nitride crystal obtained by such method, and group III nitride substrate applying the group III nitride crystal

The present invention provides a group III nitride crystal manufacturing method, which is in an atmosphere containing nitrogen, a flux containing at least one group III element and an alkali metal from among Ga, Al and In contained selected Mg , followed by growth of the group III nitride crystal in the flux, thereby forming a group III nitride substrate. Since Mg is a P-type dopant material of group III nitride crystal, and therefore even if mixed with Mg in the crystal, the crystal is still exhibit P-type or semi-insulating electrical characteristics, is not a problem in the application of electronic devices. Further, by allowing the flux contains Mg, the amount of nitrogen dissolved in the flux increases, the crystal growth can be performed in a rapid growth rate, reproducibility of crystal growth is improved.