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GaN MOSFET characteristics of the controlled interface for vertical power devices
GaN MOSFET characteristics of the controlled interface for vertical power devices
2021
Hidemoto Tomita
Sayaka Harada
Takashi Okawa
Yoshitaka Nagasato
Li Liu
Toshiyuki Kawaharamura
Keywords:
Power semiconductor device
Optoelectronics
Interface (computing)
Materials science
MOSFET
Correction
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