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C-10-1 Characteristics of GaN Schottky Barrier Diode on Si Substrate for Microwave Power Rectification
C-10-1 Characteristics of GaN Schottky Barrier Diode on Si Substrate for Microwave Power Rectification
2015
Ryota Fujihara
Hiroko Ito
Fuminori Shiotsu
Yasuo Ohno
Jin-Ping Ao
Keywords:
Electronic engineering
Schottky barrier
Rectification
Substrate (chemistry)
Metal–semiconductor junction
Materials science
Schottky diode
Optoelectronics
Microwave
microwave power
si substrate
Correction
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